Gate voltage dependence of noise distribution in radio-frequency reflectometry in gallium arsenide quantum dots
نویسندگان
چکیده
We investigate gate voltage dependence of electrical readout noise in high-speed rf reflectometry using gallium arsenide quantum dots. The fast Fourier transform spectrum from the real time measurement reflects build-in device and circuit including resonator amplifier. separate their spectral components by model analysis. Detail flicker is investigated compared to charge sensor sensitivity. point out that dominant component changes integration time.
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ژورنال
عنوان ژورنال: Applied Physics Express
سال: 2021
ISSN: ['1882-0786', '1882-0778']
DOI: https://doi.org/10.35848/1882-0786/abe41f